stn4 stn4 stn4 stn4 85 85 85 85 0 0 0 0 n channel enhancement mode mosfet 7 . 2 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 85 0 20 1 0. v1 description description description description stn4 850 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as power management and other battery power ed circuits where high-side switching. pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking y: y: y: y: year year year year code code code code a: a: a: a: process process process process code code code code feature feature feature feature ? 6 0v/ 7.2 a, r ds(on) = 27 m (typ.) @v gs = 10v ? 6 0v/ 6.8 a, r ds(on) = 32 m @v gs = 4.5 v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design
stn4 stn4 stn4 stn4 85 85 85 85 0 0 0 0 n channel enhancement mode mosfet 7 . 2 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 85 0 20 1 0. v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage vdss 6 0 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 7.2 6.8 a pulsed drain current idm 40 a continuous source current (diode conduction) is 15 a power dissipation ta=25 ta=70 pd 2. 5 1.6 w operation junction temperature tj -55/ 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient r ja 8 0 /w
stn4 stn4 stn4 stn4 85 85 85 85 0 0 0 0 n channel enhancement mode mosfet 7 . 2 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 85 0 20 1 0. v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,id=250ua 6 0 v gate threshold voltage v gs(th) v ds =v gs ,id= 2 50ua 1.0 3 .0 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds = 48 v,v gs =0v 1 ua v ds = 48 v,v gs =0v t j = 8 5 5 on-state drain current i d(on) v ds R 5v,v gs = 10v 2 5 a drain-source on- resistance r ds(on) v gs =10v,i d = 7.2 a v gs = 4.5 v,i d = 6.8 a 23 27 27 32 m forward transconductance gfs v ds = 1 5v,i d = 6. 2a 25 s diode forward voltage v sd i s = 1 .7 a ,v gs =0v 0.8 1.2 v dynamic dynamic dynamic dynamic total gate charge q g v ds = 30 v,v gs = 10v i d 6 a 25 30 nc gate-source charge q gs 4.2 gate-drain charge q gd 5.3 input capacitance c iss v ds == 30 v,vgs=0v f=1mhz 950 1400 pf output capacitance c oss 180 reverse transfer c apacitance c rss 115 turn-on time t d(on) tr v dd = 30 v,r l = 30 i d =1.0a,v gen =10v r g = 6 10 20 ns 10 20 turn-off time t d(off) tf 25 50 12 25
stn4 stn4 stn4 stn4 85 85 85 85 0 0 0 0 n channel enhancement mode mosfet 7 . 2 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 85 0 20 1 0. v1 typical typical typical typical characterictics characterictics characterictics characterictics
stn4 stn4 stn4 stn4 85 85 85 85 0 0 0 0 n channel enhancement mode mosfet 7 . 2 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 85 0 20 1 0. v1 typical typical typical typical characterictics characterictics characterictics characterictics
stn4 stn4 stn4 stn4 85 85 85 85 0 0 0 0 n channel enhancement mode mosfet 7 . 2 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 85 0 20 1 0. v1 package package package package outline outline outline outline sop-8p sop-8p sop-8p sop-8p
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